Welcome to Micro/Nanoelectronics and Energy Laboratory (MNEL)!
(1) SiC and GaN high voltage/power devices for power electronics and power ICs
(2) SiC and GaN high frequency transistors for RF and microwave
(3) 4H-SiC MEMS/NEMS for sensing and actuation in harsh environments
(4) Resistive Random Access Memories (ReRAMs) for synapse emulation and neuromorphic computing
(5) Metal oxide heterojunction photovoltaic cells
Successfully demonstrated vertical and lateral high voltage/power 4H-SiC diodes and transistors, including 1200V JBS diode, 4800V PiN diode, 1200V BJT, 2700V IGBT, 3500V MOSFET, 4200V JFET.
Modeling GaN power devices (650V and 100V) using Keysight Advanced Design Systems (ADS) software.
Applications of SiC and GaN high voltage/power devices :
- Switch mode power supplies
- Compact DC-DC converters
- AC motor drives
- Battery chargers
- Uninterruptible power supply (UPS)
Successfully demonstrated high frequency 4H-SiC bipolar transistors on both conductive and semi-insulating substrate for long-pulse power amplification at 500MHz and 1.2~1.4 GHz, with record 7 GHz ft and 5.2 GHz fmax.
RF AlGaN/GaN HEMTs with 36 GHz fmax and 20 GHz ft. Strain engineering to modulate threshold voltage and reduce leakage current.
Applications of SiC and GaN high frequency transistors:
- Radio communications
- Test instrumentation
- Base station
SiC UHF and L-band transistors
AlGaN/GaN RF HEMTs
Single crystalline 4H-SiC microelectromechanical and nanoelectromechanical systems (MEMS/NEMS) are mechanically robust, chemically inert, electrically stable and biocompatible, desirable for operation in harsh environments such as high temperature, high pressure, radiation, chemical, corrosion, biomedical, ……
However, due to the extreme chemical resistance, undercut SiC to release suspended structures by conventional wet chemical etching is not possible. We have developed a novel dopant-selective photoelectrochemical etching (PEC) process to solve this challenge. Some structures are shown here:
RRAMs are promising candidate for next-generation nonvolatile memories. Bioorganic materials based RRAMs with inherent biodegradable and biocompatible properties represent an important step toward the realization of green and sustainable electronics. We are investigating the capability of such devices for the emulation of an artificial synapse for next-generation neuromorphic computing systems, with potential to replace traditional energy-inefficient computers based on the von Neumann architecture.
Currently we are developing a novel technology to significantly improve conversion efficiency of metal oxide heterojunction solar cell.