Welcome to Micro/Nanoelectronics and Energy Laboratory (MNEL)!
(1) SiC, GaN and Ga2O3 high voltage/power devices for power electronics and power ICs
(2) SiC and GaN high frequency transistors for RF and microwave
(3) 4H-SiC MEMS/NEMS for sensing and actuation in chemical, biomedical and harsh environments
(4) Resistive Random Access Memories (ReRAMs) for synapse emulation and neuromorphic computing
(5) Metal oxide heterojunction photovoltaic cells
Single crystalline 4H-SiC microelectromechanical and nanoelectromechanical systems (MEMS/NEMS) are mechanically robust, chemically inert, electrically stable and biocompatible, desirable for operation in harsh environments such as high temperature, high pressure, radiation, chemical, corrosion, biomedical, ……
However, due to the extreme chemical resistance, undercut SiC to release suspended structures by conventional wet chemical etching is not possible. We have developed a novel dopant-selective photoelectrochemical etching (PEC) process to solve this challenge. Some structures are shown here:
RRAMs are promising candidate for next-generation nonvolatile memories. Bioorganic materials based RRAMs with inherent biodegradable and biocompatible properties represent an important step toward the realization of green and sustainable electronics. We are investigating the capability of such devices for the emulation of an artificial synapse for next-generation neuromorphic computing systems, with potential to replace traditional energy-inefficient computers based on the von Neumann architecture.
Currently we are developing a novel technology to significantly improve conversion efficiency of metal oxide heterojunction solar cell.