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Department of Physics and Astronomy Gu Research Group

Journal Publications

50. John Igo, Shengwen Zhou, Zhi-Gang Yu, Oliver Peter Amnuayphol, Feng Zhao, and Yi Gu, “Anharmonic Phonon Coupling in Semiconducting and Metal-Like Van der Waals In2Se3,” Journal of Physical Chemistry C 122, 22849 (2018).

49. Liangliang Yang, John Igo, Matthew Gabel, and Yi Gu, “In-Plane Homojunctions and Their Dominant Effects on Charge Transport in Vertical Van der Waals Heterostructures,” Journal of Physical Chemistry C 122, 20513 (2018).

48. Qiaoming Wang, Liangliang Yang, Shengwen Zhou, Xianjun Ye, Zhe Wang, Wenguang Zhu, Matthew D. McCluskey, and Yi Gu, “Phase-Defined van der Waals Schottky Junctions with Significantly Enhanced Thermoelectric Properties,” Journal of Physical Chemistry Letters 8, 2887 (2017).

47. Wenjun Ding, Jianbao Zhu, Zhe Wang, Yanfei Gao, Di Xiao, Yi Gu, Zhenyu Zhang, and Wenguang Zhu, “Predictive design of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials,” Nature Communications 8, 14956 (2017).

46. Elham Mafi, Xin Tao, Wenguang Zhu, Yanfei Gao, Chongmin Wang, and Yi Gu, “Generation and the Role of Dislocations in Single-Crystalline Phase-Change In2Se3 Nanowires Under Electrical Pulses,” Nanotechnology 27, 335704 (2016).

45. Qiaoming Wang, Xin Tao, Liangliang Yang, and Yi Gu, “Current-crowding in two-dimensional black phosphorus field-effect transistors,” Applied Physics Letters 108, 103109 (2016).

44. Shengwen Zhou, Xin Tao, and Yi Gu, “Thickness-Dependent Thermal Conductivity of Suspended Two-Dimensional Single-Crystal In2Se3 Layers Grown by Chemical Vapor Deposition,” Journal of Physical Chemistry C 120, 4753 (2016).

43. Liangliang Yang, Qiaoming Wang, Xin Tao, Shelby P. Taylor, and Yi Gu, “Gate-tunable photocurrent in ZnO nanowires mediated by nanowire/substrate interface states,” Applied Physics Letters 106, 093111 (2015).

42. Xin Tao, Elham Mafi, and Yi Gu, “Synthesis and Ultrfast Carrier Dynamics of Single-Crystal Two-Dimensional CuInSe2 Nanosheets,” Journal of Physical Chemistry Letters 5, 2857 (2014)

41. Xin Tao, Elham Mafi, and Yi Gu, “Ultrafast carrier dynamics in single crystal In2Se3 thin layers,“ Applied Physics Letters 103, 193115 (2013).
http://scitation.aip.org/content/aip/journal/apl/103/19/10.1063/1.4828558

40. Yu Fu, Jinwen Zhang, Hang Liu, William C. Hiscox, and Yi Gu, “Ionic Liquid-Assisted Exfoliation of Graphite Oxide for Simultaneous Reduction and Functionalization to Graphenes with Improved Properties,” Journal of Material Chemistry A 1, 2663 (2013).
http://pubs.rsc.org/en/Content/ArticleLanding/2013/TA/c2ta00353h#!divAbstract

39. Anya M. Rasmussen, Samuel T. Teklemichael, Elham Mafi, Yi Gu, and Matthew D. McCluskey, “Pressure-induced phase transformation of In2Se3,” Applied Physics Letters 102, 062105 (2013).
http://scitation.aip.org/content/aip/journal/apl/102/6/10.1063/1.4792313

38. “Crystalline-Crystalline Phase Transformations in Two-Dimensional In2Se3 Thin Layers,” Xin Tao and Yi Gu, Nano Letters 13, 3501 (2013). Link:http://pubs.acs.org/doi/abs/10.1021/nl400888p

37.”Electrostatics and electrical transport in semiconductor nanowire Schottky diodes“, Cheng-Han Hsu, Qiaoming Wang, Xin Tao, and Yi Gu, Applied Physics Letters 101, 183103 (2012).

36.” Electronically Driven Amorphization in Phase-Change In2Se3 Nanowires“, Elham Mafi , Afsoon Soudi , and Yi Gu, J. Phys. Chem. C 116, 22539 (2012)”

35.” Diameter-Dependent Surface Photovoltage and Surface State Density in Single Semiconductor Nanowires“, Afsoon Soudi , Cheng-Han Hsu , and Yi Gu , Nano Letters 12 ,5111 (2012)

34.” Probing transconductance spatial variations in chemical vapor deposition-grown graphene nanoribbon field-effect transistors using scanning gate microscopy“, A. Soudi, G. Aivazian, X. D. Xu, S. F. Shi, and Y. Gu, Applied Physics Letters, 100, 033115 (2012)

33.” Quantitative Heat Dissipation Characteristics in Current-Carrying GaN Nanowires Probed by Combining Scanning Thermal Microscopy and Spatially Resolved Raman Spectroscopy ” A. Soudi, R. D. Dawson, and Y. Gu, ACS Nano , 5, 255 (2011)

32. “ Diameter dependence of the minority carrier diffusion length in individual ZnO nanowires ” A. Soudi, P. Dhakal, and Y. Gu, Applied Physics Letters, 96, 253115 (2010)

31. “ Friction and Shear Strength at the Nanowire-Substrate Interfaces ” Y. Zhu, Q. Qin, Y. Gu, and Z. L. Wang, Nanoscale Research Letters, 5, 291 (2010)

30. “ Mechanical properties of ZnO nanowires under different loading modes ” F. Xu, Q. Qin, A. Mishra, Y. Gu, and Y. Zhu, Nano Research, 3, 271 (2010)

29. “ Dynamics of the radiative recombination in cylindrical nanostructures with type-II band alignment ” V. A. Shuvayev, I. L. Kuskovsky, L. I. Deych, Y. Gu, Y. Gong, G. F. Neumark, M. C. Tamargo, and A. A. Lisyansky, Physical Review B, 79, 115307 (2009)

28. “ Anharmonic phonon coupling in vapor-liquid-solid grown ZnO nanowires” A.Soudi, R.Lopez,Jr., R.D.Dawson, and Y. Gu, Applied Physics Letters, 95, 193111 (2009)

27. “ Observation of Unintentionally Incorporated Nitrogen-Related Complexes in ZnO and GaN Nanowires” A. Soudi, E. H. Khan, J. T. Dickinson and Y. Gu, Nano Letters 9 ,1844 (2009)

26. “”Comment on “Luminescence study on evolution from Te isoelectronic centers to type- II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy” [J. Cryst. Growth 301-302, 277 (2007)]”” Y. Gu and I. L. Kuskovsky, Journal of Crystal Growth 310, 788 (2008)

25. “ZnSeTe rediscovered: from isoelectronic centers to quantum dots,” Y. Gu, I. L. Kuskovsky, and G. F. Neumark, in Wide Bandgap Light Emitting Materials and Devices, pp147-178, Wiley, 2007

24. “Quantitative characterization of carrier transport in nanowire photodetectors,” Y. Gu, J. P. Romankiewicz, J. K. David, J. L. Lensch, and L. J. Lauhon, Proceedings of SPIE 6479, 64790C-1 (2007).

23. “Space-charge limited current in nanowires depleted by oxygen adsorption,” Y. Gu and L. J. Lauhon, Applied Physics Letters 89, 143102 (2006).

22. “Quantitative measurement of the electron and hole mobility-lifetime products in semiconductor nanowires” Y. Gu, J. P. Romankiewicz, J. K. David, J. L. Lensch, and L. J. Lauhon,Nano Letters 6, 948 (2006).

21. “Local photocurrent mappings as a probe of contact effects and charge carrier transport in single nanowire devices,” Y. Gu, J. P. Romankiewicz, J. K. David, J. L. Lensch, and L. J. Lauhon,Journal of Vacuum Science and Technology B 24, 2172 (2006).

20. “Mechanism for increasing dopant incorporation in semiconductors via doped nanostructures” I. L. Kuskovsky, Y. Gu, Y. Gong, H. Yan, J. Lau, N. C. Noyan, G. F. Neumark, O. Maksimov, X. Zhou, M. C. Tamargo, V. Volkov, Y. Zhu, and L. Wang,  Physical Review B 73, 195306 (2006).

19. “Structure of Zn-Te-Se system with submonolayer insertion of ZnTe grown by migration enhanced epitaxy” Y. Gong, H. Yan, I. L. Kuskovsky, Y. Gu, G. F. Neumark, and M. C. Tamargo,Journal of Applied Physics 99, 064913 (2006).

18. “Near-field scanning photocurrent microscopy of a nanowire photodetector” Y. Gu, E.-S. Kwak, J. L. Lensch, J. E. Allen, T. W. Odom, and L. J. Lauhon, Applied Physics Letters 87, 043111 (2005). (Cover Article). Also featured in Photonics Spectra (September 2005)

17. “Zinc oxide nanowires grown by vapor-phase transport using selected metal catalysts: a comparative study” Z. M. Zhu, T.-L. Chen, Y. Gu, J. Warren, and R. M. Osgood, Jr., Chemistry of Materials 17, 4227 (2005).

16. “Zn-Se-Te multilayers with submonolayer quantities of Te: type-II quantum structures and isoelectronic centers” Y. Gu, I. L Kuskovsky, G. F. Neumark, X. Zhou, and M. C. Tamargo, Physical Review B 71, 045340 (2005).

15. “A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe quantum dots: effect of Berylium” Y. Gu, I. L Kuskovsky, J. Fung, R. Robinson, I. P. Herman, G. F. Neumark, X. Zhou, S. P. Guo, M. Munoz, and M. C. Tamargo, Solid State Communications 134, 677 (2005).

14. “Quantum confinement in ZnO nanorods” Y. Gu, I. L. Kuskovsky, M. Yin, S. O’Brien, and G. F. Neumark, Applied Physics Letters 85, 3833 (2004).

13. “Zinc oxide quantum rods” M. Yin, Y. Gu, Igor L. Kuskovsky, T. Andelman, Y. Zhu, G. F. Neumark, S. O’Brien, Journal of the American Chemical Society 126, 6206 (2004).

12. “Time resolved photoluminescence studies of Zn–Se–Te nanostructures with sub-monolayer quantities of Te grown by molecular beam epitaxy” Y. Gu, I. L Kuskovsky, M. van der Voort, G. F. Neumark, X. Zhou, M. Munoz, and M. C. Tamargo,Physica Status Solidi B 241, 515 (2004).

11. “Optical investigation of CdSe/Zn(Be)Se quantum dot structures: size and Cd composition” Y. Gu, Igor L Kuskovsky, J. Fung, G. F. Neumark, X. Zhou, S. P. Guo, and M. C. Tamargo, Physica Status Solidi C 1, 779 (2004).

10. “Quantum structures in Zn-Se-Te system containing submonolayer quantities of Te,” I. L. Kuskovsky, Y. Gu, M. van der Voort, G. F. Neumark, X. Zhou, M. Munoz, and M. C. Tamargo, Physica Status Solidi B 241, 527 (2004).

9. “Optical properties of semiconductors with coulomb potential fluctuations” I. L. Kuskovsky, Y. Gu, J. Fung, G. F. Neumark, S. P. Guo, and M. C. Tamargo, Physica Status Solidi C 1, 686 (2004).

8. “Photoluminescence properties of CdSe quantum dots grown on ZnSe and Zn0.97Be0.03Se by molecular beam epitaxy” X. Zhou, M. Munoz, S. P. Guo, M. C. Tamargo, Y. Gu, I. L. Kuskovsky, and G. F. Neumark, Journal of Vacuum Science and Technology B 22, 1518 (2004).

7. “Fluctuation theory of donor-acceptor pair luminescence in heavily-doped semiconductors” V. N. Bondarev, I. L Kuskovsky, Y. Gu, P. V. Pikhitsa, V. M. Belous, G. F. Neumark, S. P. Guo, and M. C. Tarmargo, Phys. Status Solidi C 1, 722 (2004).

6. “Photoluminescence of ZnxCdyMg1-x-ySe alloys as a manifestation of the breakdown of “Common-anion Rule”,” X. Zhou, Y. Gu, I. L. Kuskovsky, L. Zeng, G. F. Neumark, and M. C. Tamargo, Journal of Applied Physics 94, 7136 (2003).

5. “Determination of size and composition of optically active CdZnSe/ZnBeSe quantum dots” Y. Gu, I. L Kuskovsky, J. Fung, R. Robinson, I. P. Herman, G. F. Neumark, X. Zhou, S. P. Guo, and M. C. Tamargo, Applied Physics Letters 83, 3779 (2003).

4. “Observation of free-to-acceptor-type photoluminescence in chlorine-doped Zn(Be)Se” Y. Gu, I. L. Kuskovsky, G. F. Neumark, X. Zhou, O. Maksimov, S. P. Guo, and M. C. Tamargo, Journal of Luminescence 104, 77 (2003).

3. “Heavily p-type doped ZnSe using Te and N co-doping” Y. Gu, I. L. Kuskovsky, G. F. Neumark, W. Lin, S. P. Guo, O. Maksimov, and M. C. Tamargo, Journal of Electronic Materials 31, 799 (2002).

2. “Properties of MBE-grown ZnBeSe: study of Be isoelectronic traps and of dopant behavior” I. L. Kuskovsky, Y. Gu, M. van der Voort, C. Tian, B. Kim, I. P. Herman, G. F. Neumark, S. P. Guo, O. Maksimov, and M. C. Tamargo, Physica Status Solidi B 229, 239 (2002).

1. “Heavily p-type doped ZnSe and ZnBeSe” I. L. Kuskovsky, Y. Gu, C. Tian, G. F. Neumark, S. P. Guo, W. Lin, O. Maksimov, M. C. Tamargo, A. N. Alyoshin, and V. M. Belous, Physica Status Solidi B 229, 385 (2002).