FuSe: Co‐design of germanium oxide‐based semiconductors from deposition to devices (PI: May, Drexel University), NSF, 4/1/23–3/31/25, McCluskey: $24k
Response of gallium oxide to pressure, temperature, and alloying (PI: McCluskey, co-PI: Bergman), DOE-BES, 6/1/22–5/31/25, $451k (WSU: $238k)
Growth and characterization of photoconductive ß-Ga2O3 crystals (PI: Voss), DOE-LLNL, 10/1/21–9/30/24, McCluskey: $300k
Persistent photoconductivity in titanate semiconductor crystals, NSF-DMR, 5/1/21–4/30/24, $397k
Fundamentals of doping and defects in Ga2O3 for high breakdown field electronics (PI: Scarpulla, University of Utah), DOD-Air Force, 8/1/21–9/30/24, McCluskey: $300k
Conference Grant – International Conference on Defects in Semiconductors, DOE-BES, 7/21/19–7/26/19, $8k
Conference Grant – International Conference on Defects in Semiconductors, IUPAP, 7/21/19-7/26/19, 5k Euros