Articles 1994-1999

Peer-reviewed journal articles 1994-9 (work done before WSU)

(Historically, articles 1-28 of McCluskey’s authored publications)

• 28. M.D. McCluskey, C.G. Van de Walle, N.M. Johnson, D.P. Bour, and M. Kneissl, DX centers in AlGaN, Int. J. Mod. Phys. B 13, 1363-78 (1999).
• 27. C.G. Van de Walle, J. Neugebauer, C. Stampfl, M.D. McCluskey, and N.M. Johnson, Defects and defect reactions in semiconductor nitrides, Acta Physica Polonica A 96, 613-27 (1999).
• 26. M.D. McCluskey and N.M. Johnson, Hydrogen in compound semiconductors, J. Vacuum Sci. Tech. A 17, 2188-93 (1999).
• 25. C.G. Van de Walle, M.D. McCluskey, C.P. Master, L.T. Romano, and N.M. Johnson, Large and composition-dependent band gap bowing in In_xGa_1–xN, Mater. Sci. Engin. B 59, 274-8 (1999).
• 24. D.P. Bour, M. Kneissl, D. Hofstetter, L.T. Romano, M. McCluskey, C.G. Van de Walle, B.S. Krusor, C. Dunnrowicz, R. Donaldson, J. Walker, and N.M. Johnson, MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes, Mater. Sci. Engin. B 59, 33-8 (1999).
• 23. L.T. Romano, M.D. McCluskey, C.G. Van de Walle, J.E. Northrup, D.P. Bour, M. Kneissl, T. Suski, and J. Jun, Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures, Appl. Phys. Lett. 75, 3950-2 (1999).
• 22. H. Navarro-Contreras, F. de Anda-Salazar, J. Olvera-Hernandez, L. Hsu, M.D. McCluskey, and E.E. Haller, Shallow to deep transformation of Se donors in GaSb under hydrostatic pressure, Phys. Rev. B 59, 8003-7 (1999).
• 21. M.D. McCluskey, E.E. Haller, W. Walukiewicz, and P. Becla, Anti-crossing behavior of local vibrational modes in AlSb, Solid State Commun. 106, 587-90 (1998).
• 20. D.P. Bour, M. Kneissl, L.T. Romano, M.D. McCluskey, et al., Characteristics of InGaN/AlGaN multiple-quantum-well laser diodes, IEEE Journ. Select. Top. Quant. Electr. 4, 498-504 (1998).
• 19. W. Shan, P. Perlin, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, and D.P. Bour, Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure, Appl. Phys. Lett. 73, 1613-5 (1998).
• 18. M.D. McCluskey, L.T. Romano, B.S. Krusor, N.M. Johnson, T. Suski, and J. Jun, Interdiffusion of In and Ga in InGaN/GaN quantum wells, Appl. Phys. Lett. 73, 1281-3 (1998).
• 17. M.D. McCluskey, C.G. Van de Walle, C.P. Master, L.T. Romano, and N.M. Johnson, Large band-gap bowing of In_xGa_1-xN alloys, Appl. Phys. Lett. 72, 2725-6 (1998).
• 16. M.D. McCluskey, N.M. Johnson, C.G. Van de Walle, D.P. Bour, M. Kneissl, and W. Walukiewicz, Metastability of oxygen donors in AlGaN, Phys. Rev. Lett. 80, 4008-11 (1998).
• 15. W. Shan, P. Perlin, W. Walukiewicz, E.E. Haller, B.D. Little, J.J. Song, M.D. McCluskey, N.M. Johnson, Z.C. Feng, M. Schurman, and R.A. Stall, Optical properties of In_xGa_1-xN alloys grown by metalorganic chemical vapor deposition, J. Appl. Phys. 84, 4452-8 (1998).
• 14. M.D. McCluskey, L.T. Romano, B.S. Krusor, D.P. Bour, and S. Brennan, Phase separation in InGaN/GaN multiple quantum wells, Appl. Phys. Lett. 72, 1730-2 (1998).
• 13. L.T. Romano, M.D. McCluskey, B.S. Krusor, D.P. Bour, C. Chua, S. Brennan, and K.M. Yu, Phase separation in annealed InGaN/GaN multiple quantum wells, J. Crystal Growth 189/190, 33-6 (1998).
• 12. W. Shan, P. Perlin, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, and D.P. Bour, Pressure dependence of optical transitions in In_0.15Ga_0.85N multiple quantum wells, Phys. Rev. B 58, R10191-4 (1998).
• 11. L.T. Romano, D. Hofstetter, M.D. McCluskey, D.P. Bour, and M. Kneissl, Structural and optical properties of epitaxially overgrown third-order gratings for InGaN/GaN-based distributed feedback lasers, Appl. Phys. Lett. 73, 2706-8 (1998).
• 10. L.T. Romano, B.S. Krusor, M.D. McCluskey, D.P. Bour, and K. Nakua, Structural and optical properties of pseudomorphic In_xGa_1-xN alloys, Appl. Phys. Lett. 73, 1757-9 (1998).
• 9. M.D. McCluskey and E.E. Haller, Interstitial oxygen in silicon under hydrostatic pressure, Phys. Rev. B 56, 9520-3 (1997).
• 8. M.D. McCluskey, E.E. Haller, J. Walker, N.M. Johnson, J. Vetterhöffer, J. Weber, T.B. Joyce, and R.C. Newman, Local vibrational modes in GaAs under hydrostatic pressure, Phys. Rev. B 56, 6404-7 (1997).
• 7. M.D. McCluskey, E.E. Haller, W. Walukiewicz, and P. Becla, Hydrogen passivation of Se and Te in AlSb, Phys. Rev. B 53, 16297-301 (1996).
• 6. M.D. McCluskey, L. Hsu, L. Wang, and E.E. Haller, Infrared absorption of solid nitrogen at high pressures, Phys. Rev. B 54, 8962-4 (1996).
• 5. W. Götz, N.M. Johnson, D.P. Bour, M.D. McCluskey, and E.E. Haller, Local vibrational modes of the Mg-H acceptor complex in GaN, Appl. Phys. Lett. 69, 3725-7 (1996).
• 4. M.D. McCluskey, E.E. Haller, F.X. Zach, and E.D. Bourret-Courchesne, Vibrational spectroscopy of arsenic-hydrogen complexes in ZnSe, Appl. Phys. Lett. 68, 3476-8 (1996).
• 3. J.W. Ager III, W. Walukiewicz, M.D. McCluskey, M.A. Plano, and M.I. Landstrass, Fano interference of the Raman phonon in heavily boron-doped diamond films grown by chemical vapor deposition, Appl. Phys. Lett. 66, 616-8 (1995).
• 2. M.D. McCluskey, E.E. Haller, J. Walker, and N.M. Johnson, Vibrational spectroscopy of group II acceptor – hydrogen complexes in GaP, Phys. Rev. B 52, 11859-64 (1995).
• 1. M.D. McCluskey, E.E. Haller, J. Walker, and N.M. Johnson, Spectroscopy of hydrogen-related complexes in GaP:Zn, Appl. Phys. Lett. 65, 2191-2 (1994).