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Feng Zhao's Research Site Electrical Engineering

Feng Zhao, Ph.D.

1
Departments:
Electrical Engineering
Engineering and Computer Science

feng.zhao@wsu.edu
Phone: (360) 546-9187
Located in Engineering and Computer Science (VECS) 201P
Office Hours: By appointment

Positions available in Dr. Zhao’s group:

(1) Research Assistant: RA positions for graduate students are available. An earned B.S. or master degree in EE, ME, or Physics is required.

(2) Research projects are also available for talented and motivated undergraduate students.

Associate Professor

Research

Research interests: Microelectronics, nanoelectronics, nanomaterials, microelectromechanical system (MEMS), sensors, microfabrication. Research sponsored by NSF, DoD/Navy, industry, and WSU.

  1. Wide bandgap silicon carbide (4H-SiC) high voltage and high power devices (SBD, pn, BJT, JFET, MOSFET, IGBT) for energy conversion and power management.
  2. Optically-controlled power devices for pulsed power applications.
  3. RF transistor power amplifiers for radar, avionics, and communication.
  4. MEMS/NEMS for biomedical and harsh environments.
  5. 2-dimensional materials (graphene, MoS2) crystal growth and device development.
  6. All-natural and organic microelectronics and nanoelectronics.

Facility

  1. Class-100 clean room for device fabrication.
  2. Micro/Nanoelectronics and Energy Laboratory (MNEL) for testing and characterization of electronic devices and MEMS.

Cleanroom Bay 1 (diffusion furnace, oxidation furnace, chemical hoods, PECVD, RIE, RTP, SRD)

Cleanroom Bay 2 (mask aligner, spinner, hotplates, O2 plasma, chemical hood, Nikon microscope, ALD)

Cleanroom Bay 3 (ebeam evaporator, RF/DC sputter, ellipsometer, optical surface profiler, stylus surface profiler, AFM, Nikon microscope)

Education

  • B.S., Xi’an Jiaotong University, China, 1997
  • M.E., Nanyang Technological University, Singapore, 2001
  • Ph.D., University of Colorado at Boulder, USA, 2004

Courses

Course IDTitleSemester
ECE 451Capstone Design I
ECE 452Capstone Design II
ECE 486Solid State Device Design and Modeling
ECE 496Silicon Integrated Circuit Fabrication Technology
ECE 466Semiconductor Material and Device Characterization
ECE 302Properties of Electronic Materials
ECE 349Principles of Solid State Devices
ECE586Solid State Device Design and Modeling (graduate-level)