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Feng Zhao's Research Site Electrical Engineering

Feng Zhao, Ph.D.

Associate Professor

Electrical Engineering
School of Engineering and Computer Science

feng.zhao@wsu.edu
Phone: (360) 546-9187
Office: VECS 201P

Positions available in Dr. Zhao’s group:

(1) Research Assistant: RA positions for graduate students are available. An earned B.S. or master degree in EE, ME, or Physics is required.

(2) Research projects are also available for talented and motivated undergraduate students.

 

13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009, Nuremberg, Germany)

Research

Research interests: Microelectronics, nanoelectronics, nanomaterials, microelectromechanical (MEMS) and nanoelectromechanical (NEMS) systems, sensors, microfabrication, modeling. Research sponsored by NSF, DoD/Navy, industry, and WSU.

  1. Wide bandgap silicon carbide (SiC) and gallium nitride (GaN) high voltage/power and high frequency devices: SBD, pn diode, BJT, JFET, MOSFET, IGBT, HEMT.
  2. Optically-controlled power devices for pulsed power applications.
  3. MEMS/NEMS resonators, actuators, sensors.
  4. 2-dimensional materials (graphene, MoS2) crystal growth and device development.
  5. All-natural and organic microelectronics and nanoelectronics.

Facility

  1. Micro/Nanoelectronics and Energy Laboratory (MNEL) for testing and characterization of electronic devices and MEMS/NEMS.
  2. Class-100 clean room for device fabrication (4-inch wafer fab).

Cleanroom Bay 1 (diffusion furnace, oxidation furnace, chemical hoods, PECVD, RIE, RTP, SRD)

Cleanroom Bay 2 (mask aligner, spinner, hotplates, O2 plasma, chemical hood, Nikon microscope)

Cleanroom Bay 3 (ebeam evaporator, RF/DC sputter, ellipsometer, optical surface profiler, stylus surface profiler, AFM, Nikon microscope)

Education

  • B.S., Xi’an Jiaotong University, China
  • M.E., Nanyang Technological University, Singapore
  • Ph.D., University of Colorado at Boulder, USA

Courses

Course IDTitleSemester
ECE 451Capstone Design I
ECE 452Capstone Design II
ECE 486Solid State Device Design and Modeling
ECE 496Silicon Integrated Circuit Fabrication Technology
ECE 466Semiconductor Material and Device Characterization
ECE 302Properties of Electronic Materials
ECE 349Principles of Solid State Devices
ECE586Solid State Device Design and Modeling (graduate-level)