Feng Zhao, Ph.D.
Phone: (360) 546-9187
Located in Engineering and Computer Science (VECS) 201P
Office Hours: By appointment
Positions available in Dr. Zhao’s group:
(1) Research Assistant: RA positions for graduate students are available. An earned B.S. or master degree in EE, ME, or Physics is required.
(2) Research projects are also available for talented and motivated undergraduate students.
2011.08 Assistant Professor
2017.08 Associate Professor
Research interests: Microelectronics, nanoelectronics, nanomaterials, microelectromechanical system (MEMS), sensors, microfabrication. Research sponsored by NSF, DoD/Navy, industry, WSU.
- Wide bandgap silicon carbide (SiC) high voltage and high power devices (SBD, pn, BJT, JFET, MOSFET, IGBT) for energy conversion and power management.
- Optically-controlled power devices for pulsed power applications.
- RF transistor power amplifiers for radar, avionics, and communication.
- MEMS/NEMS for biomedical and harsh environments.
- 2-dimensional materials (graphene, MoS2) crystal growth and device development.
- All-natural microelectronics and nanoelectronics.
- Class-100 clean room for device fabrication.
- Micro/Nanoelectronics and Energy Laboratory (MNEL) for testing and characterization of electronic devices and MEMS.
Cleanroom Bay 1 (diffusion furnace, oxidation furnace, chemical hoods, PECVD, RIE, RTP, SRD)
Cleanroom Bay 2 (mask aligner, spinner, hotplates, O2 plasma, chemical hood, Nikon microscope, ALD)
Cleanroom Bay 3 (ebeam evaporator, RF/DC sputter, ellipsometer, optical surface profiler, AFM, Nikon microscope)
- B.S., Xi’an Jiaotong University, China, 1997
- M.E., Nanyang Technological University, Singapore, 2001
- Ph.D., University of Colorado at Boulder, USA, 2004
|ECE 451||Capstone Design I||Fall|
|ECE 452||Capstone Design II||Spring|
|ECE 486||Solid State Device Design and Modeling||Fall|
|ECE 496||Silicon Integrated Circuit Fabrication Technology||Spring|
|ECE 466||Semiconductor and Material Device||Fall|
|ECE 302||Properties of Electronic Materials||Spring|
|ECE 349||Principles of Solid State Devices||Fall|
|ECE586||Solid State Device Design and Modeling (graduate-level)||Fall|